X-ray Lithography

 

Or

 

NEAR FIELD X-RAY LITHOGRAPHY

 

Or

 

ULTRA  HIGH  RESOLUTION  LITHOGRAPHY

 

____________________________________________________________________

 

X-ray Lithography - on the sweet spot  , Antony Bourdillon* and Yuli Vladimirsky, (2006) book published by UHRL, P.O.Box 700001, San Jose, CA 95170, nfxrl@xraylithography.us, $15 +p&p., amazon __________________________________

-A breakthrough enhancement of Proximity X-ray Lithography.

-Invented by Yuli Vladimirsky and Antony Bourdillon.

* Academic publication list copied below

Updated 11/9/2008

 

Clear mask feature, width W
 
 

 


 


Demagnify by Bias

 

Typically 3X   

 

On the sweet spot,

The Critical Gap is equal to the square of the width of the clear mask feature divided by three times the wavelength:

 

 

 

 

Dense lines

 

With multiple exposures

And single development

 


 

 

Critical Condition

The Cornu spiral is used to describe the section of a line image due to a clear mask feature

 

Cornu Spiral:

 


Definition:

The Critical Condition occurs at maximum amplitude (red vector)

 

with OPTIMUM RESOLUTION and CONTRAST

 

the Critical Gap Gc depends on:

   1)  the square of the size W of the clear mask feature, and therefore on

   2)  the square of the demagnification factor,M, for print feature size w

       using radiation of mean wavelength l.

 

·       The more you demagnify, the bigger the Gap

(notice the power of 2)

 

Masks

·       Have large features

·       Are compact and

·       Easily formed

 

 

Technique is:

         Demonstrated to 25 nm

         Extensible to 15 nm

        Has high throughput with broad band

        Uses intense, compact relativistic light source

         Has physical simplicity,

                   0.8 nm X-rays used in proximity without lenses

        Has competitive (Silverman) X-factor** ~10

         Economic masks

        The only properly demonstrated Next Generation Lithography

 

 

**10X = equipment cost in $M/wafers per hour

 

 

Further enhancements:

          Mask Shaping for Temporal and Spatial Coherence (MASC)

          Contacts:  see J. Phys. D: Applied Physics, 38 1-5 (2005)    

 

 

Workshop reports

 

For further information consult the bibliography or mail Antony Bourdillon and Yuli Vladimirsky at UHRL (address below)

To participate in workshops mail UHRL (below)

 

 

 

Bibliography

 

 

 

 

 

 

  • A Breakthrough in X-ray Lithography, Solid State Technology, World News, February 2000 pp. 18-23,
  • Workshop in Near Field X-ray Lithography, Jefferson National Accelerator Facility, (2002) and (2003)   NFXRL workshop 1  and  NFXRL workshop 2
  • Near Field X-ray lithography simulations for printing fine bridges,  J. Phys D: Appl.Phys. 36 2471-2482 (2003)
    A.J.Bourdillon, C.B.Boothroyd, G.P.Williams and Y.Vladimirsky
  • 22nm Lithography using Near Field X-rays, Proc SPIE Microlithography (2003), SPIE vol 5037 pt II, pp 622-633, Santa Clara, Feb 23-27, 2003, A.J.Bourdillon, C.B.Boothryd, G.P.Williams and Y.Vladimirsk
  • Lithography to 15 nm using Near Field X-rays, Proc. SPIE Microlithography  vol 5374 pp. 546-557, 2004, A.J.Bourdillon, C.B.Boothryd, G.P.Williams and Y.Vladimirsky,
  • A Critical Condition in Fresnel Diffraction Used for Ultra-High Resolution Lithographic Printing, J.Phys.D: Appl.Phys. 33 1-9 (2000), A.J.Bourdillon, C.B.Boothroyd, J.R.Kong and Y.Vladimirsky
  • Demagnification in Proximity X-ray Lithography and Extensibility to 25 nm by Optimizing Fresnel Diffraction, J. Phys. D: Applied Physics, 32 L114-L118 (1999), Y.Vladimirsky, A.J.Bourdillon, O.Vladimirsky, W.Jiang and Q.Leonard
  • Proximity Correction Simulations in Ultra High Resolution Lithography, J.Phys D: Appl. Phys, 34 3209-3213 (2001), A.J.Bourdillon and C.B.Boothroyd
  • Demagnification-by-bias in Proximity X-ray Lithography, Proc SPIE Conf Microlithography, 27Feb-3Mar 2000, J.R.Kong, Q.Leonard, Y.Vladimirsky and A.J.Bourdillon
  • Ultra High Resolution Lithographic Imaging and Printing and Defect Reduction by Exposure near the Critical Condition Utilizing Fresnel Diffraction, US Patent Nr 6383697
  • Low k-Factor in Proximity Imaging for X-ray Lithography Resolution Enhancement, Proc MNE 2000, Sep 18-21, Jena, Germany, J R Kong, Y Vladimirsky and Q Leonard
  • X-ray Lithography; part 2 : Image Formation and part 8 Appendix II Recent Advances in X-ray Lithography.SPIE 2001 Short Course Notes # SC099. Y.Vladimirsky
  • Simulations for Printing Contacts with Near Field X-rays, J. Phys. D: Applied Physics, 38 1-5 (2005), A.J.Bourdillon and C.B.Boothroyd

 

 

 

 

 

Background


The breakthrough is applied to the field of Micro-Lithography as the major tool in development and production of micro-electronic devices, integrated circuits and nanotechnology..

Lithography, the printing of patterns on surfaces, is both a driving force and a bottleneck in semiconductor manufacturing and in microfabrication. Classical lithography is based on the concept of fidelity in reproducing the mask pattern onto the wafer. Shrinking critical dimension (CD) requirements in semiconductor manufacturing demand development of lithographic techniques producing desired patterns not necessarily being a mask pattern replica. Next Generation Lithography (NGL) implies the departure from the classical concept of replication fidelity.
Among NGLs competing for sub-100 nm patterning, proximity X-ray lithography (PXL) is the most advanced and mature. PXL was first introduced as a Post Optical Lithography and unavoidably inherited the classical tendency of replication fidelity. Restricted by this concept, PXL was thought to be limited to 70-75 nm imaging and printing capability at the smallest working mask/wafer gaps of 7-10 um. The breakthrough achieves ultra-high resolution beyond 25 nm by applying the concept of NGL.

 

See The Law of Universal Mendacity by Bo De Yang, authorhouse 2004, ISBN 1-4184-0573-6 (paperback) and 1-4184-0572-8 (e-books)

 

 

 

About UHRL.

 

Contact:  Antony J. Bourdillon MA DPhil(Oxon) PhD(Cantab), president
UHRL
P.O.Box 700001
San Jose, CA 95170-0001
tel/fax: (408) 777 0577

 

Antony Bourdillon took his degrees at Oxford University, UK, and researched for 10 years at Cambridge University, where he was permanent faculty before becoming a full professor in engineering in New York. He has directed two major laboratories in Sydney and Singapore where, as a professor of physics and of Materials Science, he proposed, built and directed the Singapore Synchrotron Light Source, and where he assembled an expert team.



Academic publications of Antony J. Bourdillon

 

BRIEF RESUME

 

Oxford University, MA, DPhil:          Clarendon Laboratory,

Cambridge University, PhD:            Cavendish Laboratory,

Permanent faculty staff, Department of Materials Science and Metallurgy

University of New South Wales:      Director of Electron Microscope Unit

State University of New York:          Professor of Engineering

National University of Singapore:    Professor of Physics, Professor of Materials Science

Principal Fellow IMRE (Institute of Materials Research and Engineering)

Proposer, builder and director, SSLS (Singapore Synchrotron Light Source)

Founder president of UhrlMasc Inc, CA., Champion, X-ray lithography consortium

 

 

5 monographs, 200 journal articles, patents etc:

 

 

PUBLICATIONS

 

i)  Monographs

  1. High Temperature Superconductors: Processing and Science, A.Bourdillon and N.X. Tan-Bourdillon, Academic Press, N.Y., 1994, ISBN 0-12-117680-0
  2. X-ray Lithography – on the sweet spot, Antony Bourdillon and Yuli Vladimirsky, UHRL, 2006, ISBN  978-0-9789-8390-1
  3. Quasicrystals – and quasi drivers, UHRL, 2009, ISBN 978-0-9789-8391-8
  4. The Law of Universal Mendacity – and don’t be conned, AuthorHouse, 2004, ISBN 1-4184-0573-6
  5. Quasicrystals’ 2D tiles in 3D superclusters, UHRL, 2010,  ISBN: 978-0-9789839-2-5
  6. Logarithmically Periodic Solids, Nova Science, 2011, ISBN 978-1-61122-977-6
  7. Metric, Myth and Quasicrystals, 2012, UHRL, ISBN 978-0-9789-8393-2

 

ii) Books

      1.  Logarithmically periodic solids – properties, evidence and uncertainties, in Quasicrystals: Types, Systems, and Techniques, ed. Beth E. Puckermann, Nova Science, 2011, ISBN 978-1-61761-123-0-.

 

iii) Web pages

  1. http://www.quasicrystal.us The Quasi-Bragg law and metric – from geometric scatterers in three dimensional space.  Includes a debate.
  2. http://www.Youtube.com/ Quasi Bragg law and metric in quasicrystals
  3. http://www.UHRL.net,  Quasicrystallography?!
  4. http://www.quasicrystaltiling.us Quasicrystal stereographs of axes and planes in 3-dimensions
  5. http://www.xraylithography.us X-ray lithography on the sweet spot
  6. http://www.universalmendacity.com The law of universal mendacity
  7. http:/www.jlab.org/FEL/wkshp/xrl_report_1.pdf  x-ray lithography workshop 1
  8. http:/www.jlab.org/FEL/wkshp/xrl_report_2.pdf  x-ray-lithography workshop 2
  9. http://www.Youtube.com/ A travelling wave quantum, probable and determined

 

iv) Refereed Journal Articles

  1. Experimental and Theoretical Results for the U Centre in LiF, J.H. Beaumont, J. Bordas, A.J. Bourdillon and M.R. Hayns ,J. Phys.C. 7 (1974) L349-L351
  2. Intrinsic Luminescence Excitation Spectra in NaCl, NaBr, RbCl and RbBr, J.H. Beaumont, A.J. Bourdillon and M. N. Kabler, J. Phys.C. 9 (1976) 296l-2970
  3. Intrinsic Luminescence Excitation Spectra of CaF2, A.J. Bourdillon and J.H. Beaumont, J. Phys.C. 9 (1976) L479-L481
  4. The Reflection Spectra of SrCl2 and CdF2, A.J. Bourdillon and J.H. Beaumont, J. Phys. C. 9, (l976) L473-L478
  5. Reflection Spectra of Some Perovskites From 8 to 60eV, A.J. Bourdillon, J.H. Beaumont and J. Bordas, J. Phys. C. 10 (l977) 333-341
  6. Optical Properties of PbI2 and PbF2, J.H. Beaumont, A.J. Bourdillon and J. Bordas, J. Phys. C. 10 (l977) 76l-771
  7. Energy-dispersive Diffraction From Polycrystalline Materials Using Synchrotron Radiation, J. Bordas, A.M. Glazer and C.J. Howard and A.J. Bourdillon, Phil. Mag. 35 (l977) 311-323,
  8. High-Resolution Energy-dispersive Diffraction Using Synchrotron Radiation, A.J. Bourdillon, A.M. Glazer, M. Hidaka and J. Bordas, J. Appl. Cryst. 11 (l978) 684-687
  9. The Reflection Spectrum of Lead Glass, A.J . Bourdillon, F.H. Khumalo and J.Bordas, Phil. Mag. 37 (l978) 731
  10. EXAFS in Niobium Diselenide Intercalated with Rubidium, A.J. Bourdillon, R.F. Pettifer and E.A. Marseglia, J. Phys. C. 12 (l979) 3889-3897,  Reprinted in "Selected Papers in Physics", EXAFS, Physical Society of Japan 215, 204
  11. Crystallographic Orientation Effects in Energy Dispersive X-ray Analysis, A.J. Bourdillon, P.G. Self and W.M. Stobbs, Phil. Mag. 44 (l98l) 1335-1350
  12. An Application of EELS in the Examination of Inclusions and Grain Boundaries of a SiC Ceramic, A.J. Bourdillon, N.W. Jepps, W.M. Stobbs and O.L. Krivanek, J. Micr. 124 (l98l) 49-56
  13. The Ultrastructural Localization of Beryllium in Biological Samples by Electron Energy-loss Spectroscopy, D. Dinsdale and A.J. Bourdillon, Exp. and Mol. Path. 36 (l982) 396-402
  14. A Comparison of Orientation Effects in Electron Energy-loss and Energy-dispersive X-ray Spectrometries, A.J. Bourdillon, P.G. Self and W.M. Stobbs, in Quantitative Analysis with High Spatial Resolution, Ed. G.W.Lorimer, M.H.Jacobs and P.Doig.  Metals Society, London (l98l) l47-151
  15. Current Applications of Electron Energy-loss Spectroscopy , W.M.Stobbs and A.J.Bourdillon , Ultramicroscopy 9 (l982) 303
  16. The Relative Importance of Multiple Inelastic Scattering in the Quantification of EELS, A.J. Bourdillon, D.J. Hall, C.J. Morrison and W.M. Stobbs, J. Micr. 130 (l983) l77-186
  17. Fe-Ni-S-O Layer Phase in C2M Carbonaceous Chondrites - a Hydrous Sulphide? D.J. Barber, A.J. Bourdillon and L.A. Freeman, Nature 305 (l983) 295-297
  18. Luminescence Excitation Spectra of RbI and RbBr Between 40 and l30 eV, A.J. Bourdillon and E.A. Marseglia, J. Phys. C. 16 (l983) 708l-7087
  19. Application of TEM Extended Energy-loss Fine Structure to the Study of Aluminum Oxide Films, A.J. Bourdillon, S.M.El-Mashri and A.J. Forty, Phil. Mag. A49 (l984) 341-352
  20. The Measurement of Impact Parameters by Crystallographic Orientation Effects in Electron Scattering, A.J. Bourdillon, Phil. Mag. A-50 (l984) 839-848
  21. Elastic Scattering in EELS - Fundamental Corrections to Quantification, A.J. Bourdillon and W.M. Stobbs, Ultramicroscopy l7 (l985) 147-150
  22. EXELFS of Alumina, ab initio Calculations and the Measurement of Charge Transfer, A.J. Bourdillon and G.P. Tebby, J. Micr. 140 (l985) 26l-279
  23. The Charge State of Ti Ions Implanted into Sapphire - An EXAFS Investigation, A.J. Bourdillon, S.J. Bull, P.J. Burnett and T.F. Page, J. Mat. Sci. 21 (l986) l547-1552
  24. Site Selective EXAFS via Optical De-excitation, R.F. Pettifer and A.J. Bourdillon, J. Phys. C. 20 (l987) 329-335
  25. Electron Compton Scattering from Beryllium and Graphite Using Parallel Detection , A.J. Bourdillon, R.D. Brydson and B.G.Williams, J. Micr. (l987) 293-300
  26. An Extended Energy-loss Fine Structure Study of an Icosahedral Al-Mn Phase Using Parallel Recording, A.J. Bourdillon, G.P. Tebby, T.J. Warner and W.M. Stobbs ,Phil. Mag. Lett. 55 (l987) ll5-l22
  27. Fine Line Structure Convergent Beam Electron Diffraction in Icosahedral Al6Mn, A.J. Bourdillon, Phil. Mag. Lett. 55 (l987) 2l-26
  28. Cellular Morphologies in a De-alloying Residue, J. Szot, D.J.Young, A.J. Bourdillon and K.E. Easterling, Phil. Mag. Lett. 55 (l987) 109-114
  29. EXELFS with Parallel Recording, A.J. Bourdillon and G.P. Tebby, Scanning Microscopy Supplement 2, (1988) 323-328
  30. Electron Microscopy and Microanalysis of a YBa2Cu3O7 Superconducting Oxide, S.X.Dou, A.J .Bourdillon, C.C.Sorrell, K.E .Easterling, .Ringer, N.Savvides, J.B.Dunlop and R.B.Roberts Appl. Phys. Lett. 51 (1987) 535-537
  31. EPR and NMR Measurements on High-Temperature Superconductors G.J.Bowden, P.R.Elliston, K.T.Wan, S.X.Dou, K.E.Easterling, A.J.Bourdillon and C.C.Sorrell, J. Phys. C. 20 (1987) L545-552
  32. The Processing, Properties and Applications of Y-Ba-Cu-O Superconductors , K.E.Easterling, C.C.Sorrell,  A.J.Bourdillon, S.X.Dou, G.J.Sloggett and J.C.MacFarlane, Materials Forum 11 (1988) 30-42
  33. Characterization and Properties of Phases in the Superconducting System Yttrium-Barium-Copper-Oxygen, S.X.Dou, A.J.Bourdillon, C.C.Sorrell, K.E.Easterling and N.Savvides, Int. J. Mod. Phys. B 1 (1987) 447-450
  34.  Impurity and Thermodynamic Effects on Superconducting Properties of Y1Ba2Cu3O7-x , S.X.Dou, N.Savvides, X.Y.Sun, A.J.Bourdillon, C.C.Sorrell,  J.P.Zhou and K.E.Easterling, J. Phys. C. 20 (1987), L1003-L1008
  35. Exaggerated Grain Growth and Improved Properties in Y1Ba2Cu3O7-x by Pt. Addition, S.X.Dou, J.P.Zhou, N.Savvides, A.J.Bourdillon, C.C.Sorrell, N.X.Tan and K.E.Easterling, Phil. Mag. Lett. 57 (1988) 149-153
  36. Phase Changes in Y1Ba2Cu3O7-x Induced by Fe2O3 and V2O5 Dopants, S.X.Dou, A.J.Bourdillon, X.Y.Sun, J.P.Zhou, H.K.Liu, N.Savvides, D.Haneman, C.C.Sorrell and K.E.Easterling, J. Phys. C. 21 (1988) L127-L131
  37. Dependence of Superconducting Transition Temperature on Radius of Alkali and Alkaline Earth Dopants in YBa2Cu3O7-x, S.X.Dou, A.J.Bourdillon, X.Y.Sun, H.K.Liu, J.P.Zhou, N.Savvides, C.C. Sorrell and K.E.Easterling, Phys. Stat. Sol. 147 (1988) K153-157
  38. Twin Structures, Transformation and Symmetry of Superconducting Y1Ba2Cu3O7-x Observed by Transmission Electron Microscopy, J.Zou, D.J.H.Cockayne , G.J.Auchterlonie, D.R.McKenzie, S.X.Dou, A.J.Bourdillon, C.C.Sorrell and K.E.Easterling, Phil. Mag. Lett. 57 (1988) 157-163,
  39. Influence of Composition on Properties in the Pseudobinary System BaCuO2-1/2Y2Cu2O5, S.X.Dou, C.C.Sorrell, A.J.Bourdillon, K.E.Easterling and N.Savvides, J. Aust. Ceram. Soc. 24 (1988) 57-68
  40. Volumetric Measurement of Labile Ions Through Corrosion of YBa2Cu3O7-x, S.X.Dou, H.K.Liu, A.J.Bourdillon, N.X.Tan, J.P.Zhou, C.C.Sorrell and K.E.Easterling, Mod. Phys. Lett. B, 1 (1988) 363-367
  41. Effect of Milling Medium on the Properties of Superconducting YBa2Cu3O7-x, S.X.Dou, H.K.Liu, J.P.Zhou, A.J.Bourdillon, X.Y.Sun, N.X.Tan and C.C.Sorrell , J. Am. Ceram. Soc. 71 (1988) L329-331
  42. Labile (Cu3+) Ions Correlated with Superconducting Properties in YBa2Cu3O7-x, S.X.Dou, H.K.Liu, A.J.Bourdillon, J.P.Zhou, N.Savvides and C.C.Sorrell, Solid State Comm. 68 (1988) 221-225
  43. Remanent Effects and Granular Josephson Tunnelling in Y1Ba2Cu3O7 Micro-bridge Junctions, G.J.Bowden, S.X.Dou, A.J.Bourdillon, H.K.Liu, J.P.Zhou and C.C.Sorrell, Mod. Phys. Lett. B 2 (1988) 907-913
  44. Labile Cu3+ Ions in Bi-Ca-Sr-Cu-O System and Effects of Composition and Heat Treatment, H.K.Liu, S.X.Dou, A.J.Bourdillon, N.Savvides and C.C.Sorrell, Supercond. Science and Tech., 1 (1988) 78-82
  45. The Electrochemistry of YBa2Cu3O7-x in Aqueous Potassium Hydroxide, S.Rochani, D.B.Hibbert, S.X.Dou, A.J.Bourdillon, H.K.Liu, J.P.Zhou and C.C.Sorrell, J. Electroanalytical Chem., 248 (1988) 461-466
  46. Liquid Phase Sintering of Tl-Ba-Ca-Cu-O with Superconducting Transition at 122K., S.X.Dou, H.K.Liu, A.J.Bourdillon, N.X.Tan, J.P.Zhou and C.C.Sorrell, Mod. Phys. Lett., 2 (1988) 879-882
  47. Processing, Characterization and Properties of the       Superconducting Tl-Ba-Ca-Cu-O System, S.X.Dou, H.K.Liu, A.J.Bourdillon, N.X.Tan, N.Savvides, C.Andrikidis, R.B.Roberts and C.C.Sorrell, Supercon. Sci. and Tech. 1 (1988) 83-87
  48. A Comparison of the Stability of Bi2Sr2CaCu2O8+y with YBa2Cu3O6.5+y in Various Solutions, H.K.Liu, S.X.Dou, A.J.Bourdillon and C.C.Sorrell, Supercon. Sci. and Tech. 1 (1989) 194-197
  49. Superlattices and Stacking Faults in Bi2(SrCa)3Cu2O8+y, N.X.Tan, A.J.Bourdillon, S.X.Dou, H.K.Liu and C.C.Sorrell, Phil. Mag. Lett. 58 (1988) 149-156
  50. An X-ray Induced Optical Luminescence Excitation Study of Zinc Surface Species on a Zinc Metal Substrate, R.F.Pettifer, C.Hermes and A.J.Bourdillon, Invited paper to Synchrotron Radiation Conf., Seattle, August 1988, Physica B 158 (1989) 584-588,
  51. Correlation of Critical Current Density with Cu3+ Concentration and Density in YBa2Cu3O7-x, S.X.Dou, H.K.Liu, J.P.Zhou, A.J.Bourdillon, N.Savvides, M.Apperley, L.Vance, A.Gouch and C.C.Sorrell, Mod. Phys. Lett. B., 3 (1989) 151-156
  52. Superlattices in Pb-doped Bi-Sr-Ca-Cu-O and in a non- superconducting Sr-Ca-Cu-O Precursor , N.X.Tan, A.J.Bourdillon, S.X.Dou and H.K.Liu, Phil. Mag. Lett., 59 (1989) 213-217
  53. The Stabilization of the 110 K Superconducting Phase in Bi-Sr-Ca- Cu-O Systems by Pb Doping, H.K.Liu, S.X.Dou, A.J.Bourdillon, M.Kviz, N.X.Tan, J.P.Zhou, N.Savvides and C.C.Sorrell, Physica C 157 (1988) 93-98
  54. The Stability of Superconducting Phases in Bi-Sr-Ca-Cu-O and the Role of Pb Doping, S.X.Dou, H.K.Liu, A.J.Bourdillon, M.Kviz, N.X.Tan and C.C.Sorrell, Phys. Rev. B 40 (1989) 5266-5269
  55. Diffusion Grown Superconducting Films of Bi-Pb-Sr-Ca-Cu-O with Zero Resistance at 103 K, S.X.Dou, H.K.Liu, A.J.Bourdillon, N.X.Tan and C.C.Sorrell, Physica C, 158 (1989) 93-96
  56. Twins, Kinks and Cracks in Superconducting YBa2Cu3O7-x, J.P.Zhou, S.X.Dou, C.C.Sorrell, H.K.Liu and A.J.Bourdillon, J. Mat. Sci. Lett., 8 (1989) 1147-1150
  57. Gravity Aided Texture Growth in Ceramic Superconductors A.J.Bourdillon, N.X.Tan, N.Savvides and J.Sharp, Mod. Phys. Lett B., 3 (1989) 1053-1060,
  58. First Non-aqueous Electrodeposition of InP, In and P Films, S.N.Sahu and A.J.Bourdillon, Phys. Stat. Sol. (a), 111 (1989) K179-183
  59. Why Does High Tc Sometimes Depend on Oxidation - An Investigation of Madelung Potentials, N.X.Tan and A.J.Bourdillon, Int. J. Mod. Phys. B, 4 (1990) 517-524
  60. A Comparative Study of ArF Laser Ablation Induced Plasma Plume of Y, YO, Cu, CuO, YCuO and YBa2Cu3O7 by fluoresence spectroscopy, A.Hoffman, R.Manory, A.J.Bourdillon and G.L.Paul, Supercond. Sci. & Tech. 3 (1990) 395-430
  61. Welding of High Tc Ceramics by Gravity Aided Texture Growth in the Partial Melting Regime, N.X.Tan and A.J.Bourdillon, Materials Letters, 9 (1990) 339-341
  62. Liquid Formation at the Peritectic Temperature in Superconducting YBa2Cu3O7-x - Observation of a New Phase YBa4CuAlO8, J.P.Zhou, C.C.Sorrell, A.J.Bourdillon and S.X.Dou, J. Am. Ceram. Soc. 73 (1990) 2147-2150
  63. Continuous Production of Superconducting Wires, N.X.Tan and A.J.Bourdillon, J. Materials Science Lett., 10 (1991) 1081-1083
  64. Diffusion Texture Growth of Bi-Sr-Ca-Cu-O Superconductors, N.X. Tan, A.J.Bourdillon and J.Tsai, Int. J. Mod. Phys. B 5 (1991) 1817-1828
  65. The Influence of Carbon in the Development of Microstrucures in Hadfield Steels, T.N. Kim and A.J. Bourdillon, Mat. Sci. & Tech. 8 (1992) 1011-1021
  66. Energy Levels and Hole Formation in High Temperature Superconductors, A.J.Bourdillon and N.X.Tan, Physica C, 194 (1992) 372-336
  67. Textured Bi2Sr2Ca2Cu3O10 Tiles Manufactured from Sintered and Plasma Sprayed Precursors for Magnetic Shielding, N.X.Tan, A.J.Bourdillon, Y.Horan and H.Herman, J. Thermal Spray Tech., 1 (1992) 71-74
  68. Electron Beam Writing in Fabricating Planar High-Tc Josephson Junctions, S.Tolpygo, B.Nadgorny, S.Shokhor, T.Tafuri, Y.Lin, A.Bourdillon and M.Gurvitch, Physica C, 209 211-214 (1993)
  69. High Quality YBa2Cu3O7-x Josephson Junctions made by Direct Electron Beam Writing, S.Tolpygo, B.Nadgorny, S.Shokhor, T.Tafuri, Y.Lin, A.Bourdillon and M.Gurvitch, Appl. Phys. Lett. 63 1696-1698 (1993)
  70. Impact Parameters and Intraband Scattering in Electron Diffraction from Thin Foils, A.J.Bourdillon, J. Phys. Condensed Matter 7 803-809 (1995)
  71. Displacement Damage in Supported YBa2Cu3O7-x Thin Films and Finite Element Simulations, A.J.Bourdillon and N.X.Tan, Superconductor Science and Technology 8 507-518 (1995),
  72. Flux Pinning in YBa2Cu3O7-d thin films with ordered arrays of columnar defects, J.Y.Lin, M.Gurvitch, S.K.Tolpygo, A.Bourdillon, S.Y.Hou and J.M.Phillips, Phys. Rev. B, 54 R12717-20 (1996)
  73. Hot Isostatically Pressed Bi2Sr2Ca2Cu3O10 Coils Made, From Novel Precursers, A.J.Bourdillon, N.X.Tan and C.L.Ong, J. Mat. Sci. Lett., 15, 439-441 (1996)
  74. Orientation Anomalies in Plating Thickness Measurements from Advanced Packaging Substrates, N.X.Tan, A.J.Y.Lee, A.J.Bourdillon and C.Y.S.Tan, Semiconductor Science and Technology, 11, 437-442, 1996
  75. Interband Scattering of Channelled Electrons Suffering High Energy Losses in Crystals, A.J.Bourdillon and C.L.Cha, Phil. Mag. Lett. 74, 113-118 (1996)
  76. Analysis of Hydrocarbon Coatings to Inhibit Epoxy-bleeding on Ceramic Pin Grid Array Substrates, N.X.Tan, K.H.H.Lim and A.J.Bourdillon, J. Mat. Sci., Electronic Materials, 8, 73-77 (1997)
  77. Thermal Stability in High-Tc Coil and Magnet Design by Processing Control of Bi(Pb)-2223/Ag Multifilamentary Tapes, N.V.Vo, C.C.Neo, A.J.Bourdillon, S.X.Dou and H.K.Liu, Journal of Superconductivity, 9, 605-614 (1996)
  78. Engineering of Surfaces in Ceramic Pin Grid Array Packages to Inhibit Epoxy Bleeding, N.X.Tan, K.H.H.Lim, B.Chin and A.J.Bourdillon, HP Journal, 49, 81-90 (1998)
  79. Deep sub-micron ULSI Fabrication with Nitrogen (N+) Implantation: The Effect on TiSi2 Formation, Current Leakage and Defects Associated, C.W.Lim, A.J.Bourdillon, H.Gong, C.H.Tung, S.K.Lahiri, K.L.Pey, K.H.Lee, H.Wong and L.Chan, J.Mat.Sci (1998)
  80. Surface Treatment and Analysis for Adhesion Enhancement in Advanced Organic IC Packaging, N.X.Tan, E.Flores, R.Gopalakrishnan and A.J.Bourdillon, IEEE (1998)
  81. Transmission Electron Microscopy observation in CMOS devices of Titanium Self Aligned silicide (SALICIDE) Technology with Nitrogen (N+) Implantation Proces, Y.M.Jia, C.W.Lim, A.J.Bourdillon and C.Boothroyd, J.Mat.Sci.Lett. 18 385-388 (1999)
  82. Use of the Track Structure Approach in TEM, A.J.Bourdillon, Ultramicroscopy, 83 261-264 (2000) invited paper for commemorative issue in honour of Michael Stobbs (1999)
  83. Evaluation of silicon nitride and silicon carbide as efficient polysilicon grain-growth inhibitors, C.L.Cha, Y.M.Jia, A.J.Bourdillon, J.S.Pan, H.Gong, E.F.Chor, A.Q.Zhang, S.K.Tang and C.B.Boothroyd, Appl. Phys. Lett.75, 355-357 (1999)
  84. Improvement and XPS characterization of substrate related lithography profile degredation, C.P.Soo, M.H.Fan and A.J.Bourdillon, J. Am. Vac. Soc.
  85. Study of acid diffusion in positive tone CA resist using on-wafer imaging technique, B.Lu, J.W.Taylor, F.Cerrina, C.P.Soo and A.J.Bourdillon, J.Am.Vac.Soc.B 17 3345-3350 (1999)
  86. Enhancement or reduction of catalytic dissolution reaction in chemically amplified resists by substrate contaminants, C.P.Soo, S.Valiyavettil, A.Huan, A.Wee, T.C.Ang, A.J.Bourdillon, M.H.Fan and L.Chan, IEEE, Trans. Semiconductor Manufacturing 12, 462-469 (1999)
  87. A Study on the Effect of Incorporating Nitrogen Ions on Titanium Disilicide Thin Film Formation for ULSI Applications, C.W.Lim, A.J.Bourdillon, H.Gong, S.K.Lahiri, K.L.Pey and K.H.Lee, J.Mat.Sci.Lett. 18 743-746 (1999)
  88. Demagnification in Proximity X-ray Lithography and Extensibility to 25 nm by Optimizing Fresnel Diffraction, Y.Vladimirsky, A.J.Bourdillon, O.Vladimirsky, W.Jiang and Q.Leonard, J. Phys. D: Applied Physics, 32 L114-L118 (1999)
  89. Enhancement of Hot-carrier Injection Resistance in Gate Dielectrics of Deep Sub-micron Metal Oxide Semiconductor Field Effect Transistors, C.L.Cha, A.J.Bourdillon et al, Appl. Phys. Lett. (1999)
  90. A Critical Condition in Fresnel Diffraction Used for Ultra-High Resolution Lithographic Printing, A.J.Bourdillon, C.B.Boothroyd, J.R.Kong and Y.Vladimirsky, J.Phys.D: Appl.Phys. 33 1-9 (2000)
  91. Proximity Correction Simulations in Ultra High Resolution X-ray Lithography, A.J.Bourdillon and C.B.Boothroyd, J.Phys.D: Appl.Phys., 34  3209-3213 (2001)
  92. Near Field X-ray Lithography Simulations for Printing Fine Bridges, A.J.Bourdillon, C.B.Boothroyd, G.P.Williams and Y.Vladimirsky, J.Phys.D: Appl. Phys. 36 2472-2482 (2003),
  93. Simulations for printing contacts with near field X-rays, A.J.Bourdillon and C.B.Boothroyd, J.Phys. D:Applied Physics  38 1-5 (2005)
  94.  Nearly free-electron energy-bands in a logarithmically periodic solid, A.J.Bourdillon, Solid State Comm. 149 1221-5 (2009)
  95. Indexed scattering powers in a logarithmically periodic solid. A.J.Bourdillon,  International Journal of   

Condensed Matter, Advanced Materials , and Superconductivity Research (2010)

  1.  A wavegroup for entanglement, linking uncertainties in space and time, A.J.Bourdillon, Journal of Modern Physics, 3 290-296 (2012); doi10.4236/jmp.2012.33041  http://www.SciRP.org/journal/jmp .
  2.  The metric for the quasi-Bragg law measured for the first time, A.J.Bourdillon, invited review for Materials (2012) 5 1-x manuscripts; doi:10.3390/ma50x000x.

 

 

v) Conference Proceedings (including refereed contributions)

  1. Optical Properties of PbI2, PbF2 and CdF2, J.H. Beaumont, J. Bordas and A.J. Bourdillon, Proc.IVth Int. Conf. Vac. Ultraviolet Rad. Phys., Hamburg, Ed.  R. Haensel et al. Pergamon (l974) p. 1895,
  2. EXAFS in Niobium Diselenide Intercalated with Rubidium, A.J. Bourdillon, R.F. Pettifer and E.A. Marseglia, Physica, B99 (l980) p. 64
  3. Measurement of Electron Densities Using An Electron Microscope - A New Approach to Compton Scattering, A.J. Bourdillon and B.C. Williams, Proc. Inst. Physics EMAG Conf., Ed. M.J. Goringe (l98l) pp. 205-208
  4. Electron Energy-loss Spectroscopy Used For Localized Compton Scattering, A.J. Bourdillon and B.G. Williams, Proc. EMSA l982, Washington, Ed. G.W. Bailey, Claitor (l982), pp. 506-511
  5. Localization in the Orientation Dependence of X-ray and Energy-loss Spectra, A.J. Bourdillon, Proc. Microbeam Analysis Conf., Washington, Ed. K.F.J.Heinrich, San Fransisco Press (1982) pp. 84-87
  6. Secondary Fluorescence Corrections in Thin Film Microanalysis, A.J. Bourdillon, Proc EMSA l982, Ed.G.W. Bailey, Claitor (l982) p. 5l0
  7. EXAFS of a-NiAs and the Measurement of Charge Transfer, A.J. Bourdillon, G.P. Tebby, R.T. Phillips and E.A. Marseglia, in EXAFS and Near Edge Structure III, ed. K.O.Hodgson, B.Hedman and J.G.Penner-Hahn, Springer Proc. Phys. Vol. 2 (Springer-Verlag, 1984) pp. 86-88
  8. Site Selective EXAFS via Optical De-excitation, A.J. Bourdillon, R.F. Pettifer and P.W. McMillan, Daresbury Ann. Rep. (l983) p. 60
  9. EXAFS in Amorphous Systems, A.J. Bourdillon, R.T. Phillips, G.P. Tebby and E.A. Marseglia, Daresbury Ann. Rep (l983) p. 70
  10. A Dual Parallel and Serial Detection Spectrometer for EELS A.J.Bourdillon, W.M. Stobbs, K. Page, R. Home, C. Wilson, B.Ambrose, L.J. Turner and G.P. Tebby, Inst. Phys. Conf. Ser. 78 (l985) pp. 161-164, Ed. M. Goringe
  11. A Set of Standards for the Calibration of Energy-dispersive X-ray Detectors, A.J. Bourdillon, Inst. Phys. Conf. Ser. 78 (l985) pp. 209-212, Ed. M.Goringe
  12. The Use of Selected Area Channelling in the STEM for the Study of Local Texture Development During Grain Growth, E.M.Grant, A.J.Bourdillon and W.M.Stobbs, Inst. Phys. Conf. Ser. No. 78, ed. G.J.Tatlock, Hilger (1985), pp. 367-370
  13. EELS by a Dual Parallel and Serial Detection Spectrometer, A.J. Bourdillon and W.M. Stobbs, J. Electron Micr. 35 (l986) 523 Proc XIth ICEM, Kyoto, Japan
  14. TEM Observation of Defects in Y1Ba2Cu3O7, J.Zou, D.J.H.Cockayne, S.X.Dou, A.J.Bourdillon, C.C.Sorrell and K.E.Easterling, Australian Physicist 24 (1987) p. 167 (abstract)
  15. Influence of Composition on Properties in the Pseudobinary System BaCuO2-1/2Y2Cu2O5, S.X.Dou, C.C.Sorrell, A.J.Bourdillon, K.E.Easterling and N.Savvides, Australian Physicist 24 (1987) p. 166 (abstract)
  16. TEM Microanalysis of A Crystal in Superconducting YBa2Cu3O7 S.X.Dou, S.Ringer, A.J.Bourdillon, C.C.Sorrell and K.E.Easterling, Australian Physicist 24 (1987) p. 165 (abstract)
  17. EPR and NMR Measurements on High-Temperature Superconductors G.J.Bowden, P.R.Elliston, K.T.Wan, S.X.Dou, K.E.Easterling, A.J. Bourdillon and C.C.Sorrell, Australian Physicist 24, p. 164 (1987) (abstract),
  18. Chemical Influences in the Processing of Bulk Superconducting YBa2Cu3O7-x, A.J.Bourdillon, S.X.Dou, H.K.Liu, N.Savvides, J.P.Zhou, N.X.Tan and C.C.Sorrell, Extended Abstracts, Proc. Australian Bicentenary Conf. Sydney Jan. 1988, Ed. J.Bell and T.Freeman pp. 61-64
  19. Fabrication and Properties of Ag/YBa2Cu3O7-x Composite, S.X.Dou, J.P.Zhou, A.J.Bourdillon, H.K.Liu, N.X.Tan, Z.B.Shao and C.C.Sorrell, Proceedings  of  The  Australian Bicentenary Congress of Physics, 25-29 Jan. 1988   Ed.  J.Bell and T.Freeman pp. 13-15
  20. Effect of Impurities on Properties of Y1Ba2Cu3O7-x, S.X.Dou, A.J.Bourdillon, C.C.Sorrell, H.K.Liu, X.Y.Sun, J.P.Zhou, H.J.Logren, E.M.Lindh and K.E.Easterling, Proceedings of American Ceram. Conference, 1988, pp. 265-271
  21. Remanent Effects and Granular Josephson Tunnelling in 1:2:3 Micro-bridge Junctions, G.J.Bowden, S.A.Healey, S.X.Dou, A.J.Bourdillon, H.K.Liu, J.P.Zhou and C.C.Sorrell, Proc. Australian Bicentenary Cong. Phys. Jan 1988, Ed. J.Bell and T.Freeman, pp. 7-8
  22. Preparation of thick film YBa2Cu3O7 on various substrates, H.K.Liu, S.X.Dou, A.J.Bourdillon, J.P.Zhou, N.X.Tan and C.C.Sorrell, J. Aust. Ceram. Soc., 24, p. 24 (1988) (Abstract)
  23. CuO2 Planes or CuO chains - which is crucial to superconductivity in YBa2CU3O7-x ? S.X.Dou, H.K.Liu, A.J.Bourdillon and C.C.Sorrell, Mat. Sci. Forum, 34-36, pp. 355-357, (1988)
  24. The Important Role of High Oxidation States in Cuprate Superconductors, S.X.Dou, H.K.Liu, J.P.Zhou, A.J.Bourdillon and C.C.Sorrell, Proc. 1st Int. Symp. on Superconductivity, 28-31 Aug, 1988, Nagoya, Japan.
  25. Effect of Pb Substitution  on  Superconducting  Transitions  in Bi-Sr-Ca-Cu-O, H.K.Liu, S.X.Dou, N.Savvides, J.P.Zhou, N.X.Tan, A.J.Bourdillon and C.C.Sorrell, Mat. Sci. Forum, 34-36 (1988) pp. 309-314
  26. TEM Study of Superconducting (Pb,Bi)2(Sr,Ca)3Cu2O8+y, N.X.Tan, A.J.Bourdillon, S.X.Dou, H.K.Liu, J.P.Zhou and C.C.Sorrell, Mater. Sci. Forum 34-36 (1988) pp. 351-354
  27. Critical Current Density and Labile Ions in Superconducting YBa2Cu3O7-x Wire and Tape, S.X.Dou, H.K.Liu, J.P.Zhou, A.J.Bourdillon, N.Savvides, M.Apperley, A.Gouch and C.C.Sorrell, Mater. Sci. Forum 34-36 (1988) pp. 341-344
  28. Group V, VI and VII Dopants Effects on YBa2Cu3O7-x, H.J.Logren, E.M.Lindh, C.C.Sorrell, S.X.Dou, H.K.Liu and A.J.Bourdillon, Mater. Sci. Forum, 34-36 (1988) pp. 329-333
  29. Melt Processing of Superconducting YBa2Cu3O7-x, J.P.Zhou, S.X.Dou, H.K.Liu, A.J.Bourdillon and C.C.Sorrell, Mater. Sci. Forum, 34-36 (1988) pp. 323-328
  30. Cold Drawing of Silver Clad YBa2Cu3O7-x, M.H.Apperley, A.J.Gouch, S.X.Dou, H.K.Liu, A.J.Bourdillon and C.C.Sorrell, Mater. Sci. Forum, 34-36 (1988) pp. 359-362
  31. Processing, Characterisation and Properties of the Superconducting Tl-Ba-Ca-Cu-O System, S.X.Dou, H.K.Liu, A.J.Bourdillon, N.X.Tan, N.Savvides, C.Andrikidis, R.B.Roberts and C.C.Sorrell, Proc. 1st Int. Symp. on Superconductivity 28-31 Aug. 1988, Nagoya, Ed. K.Ishiguro, pp. 813-818, Springer-Verlag (1989)
  32. Comparison  of the Stability of Bi2Sr2CaCu2O8 with YBa2Cu3O6.5+y in Various Solutions, H.K.Liu, S.X.Dou, A.J.Bourdillon and C.C.Sorrell, Proc. 1st Int. Symp. on Superconductivity 28-31 Aug. 1988, Nagoya, Ed. K.Ishiguro, pp. 635-639, Springer-Verlag (1989),
  33. Highly Oriented YBa2Cu3O7-x Thin Films Prepared by Unbalanced DC Magnetron Sputtering from a Single Stoichiometric Target, N.Savvides, C.Andrikidis, D.W.Hensley, R.Driver, J.C.MacFarlane, N.X.Tan and A.J.Bourdillon, MRS Fall Meeting 1989, Boston
  34. Texturing Crystal Growth in Vertical Thermal Gradients, N.X.Tan, A.J.Bourdillon and N.Savvides, MRS Fall Meeting 1989
  35. Twinning Accomodation in Highly Aligned Superconducting YBa2Cu3O7-x, J.P.Zhou, C.C.Sorrell, S.X.Dou and A.J.Bourdillon, Australian J. Phys. 42 (1989) pp. 419-424
  36. What do Madelung Potentials Imply for High Tc ? A.J.Bourdillon and N.X.Tan, Annual Conference on High Tc Applications at the State University of New York at Buffalo (1990) ed. Y.H.Kao, P.Coppens and H.S.Kwok, AIP Conf. Proc. 219 pp. 165-171
  37. Texturing High-Temperature Superconductors and Maximizing Flux Pinning in Superconducting Coils, N.X.Tan and A.J.Bourdillon, Annual Conference on High Tc Applications at the State University of New York at Buffalo (1990) ed. Y.H.Kao, P.Coppens and H.S.Kwok, AIP Conf. Proc. 219 pp. 453-460
  38. Textured Bi2Sr2Ca2Cu3O10 Tiles Made from Sintered and Plasma Sprayed Precursors for Magnetic Shielding, N.X.Tan, A.J.Bourdillon, Y.Horan and H.Herman, Superconductivity and Its Applications, ed Y.H.Kao, A.E.Kaloyeros and H.S.Kwok, AIP Conf. Proc. 251 (1992) pp. 732-739,
  39. A Precursor Method for Reacting and Aligning Bi2Sr2Ca2Cu3O10, N.X.Tan, A.J.Bourdillon and W.H.Tsai, Superconductivity and Its Applications, ed Y.H.Kao, A.E.Kaloyeros and H.S.Kwok, AIP Conf. Proc. 251 (1992) pp. 437-447
  40. Magnetic Shielding in MAGLEV, A.J.Bourdillon, Proc. Workshop on Technology Issues of Superconducting MAGLEV Transportation Systems, Brookhaven National Laboratory, May 1991, Ed. J.Wegrzyn and D.T.Shaw, DOE/OSTI-4500-R75, pp. 36-40
  41. Relationship of Magnetic Moment of Metallic Alloys to Image Artifact During Magnetic Resonance Imaging, A.A.Zwarun, A,J,Bourdillon, T.M.Button, M.Chaparali and D.J.Castro, SPIE vol. 1650, Medical Laser and Systems (1992) pp. 33-42
  42. Pressure-forced High Temperature Superconductor-metal Composite, W.H.Tsai, S.K.Tolpygo, N.X.Tan, A.J.Bourdillon, M.Gurvitch and J.Parise, Superconductivity and its Applications, AIP Conf. Proc. Vol. 273, ed. H.S.Kwok, D.T.Shaw and M.J.Naughton, p.593 (1993)
  43. In-plane High-Temperature Superconducting Devices: Concept and Realization, M.Gurvitch, S.Tolpygo, B.Nadgorny, S.Shokhor, J.-Y. Lin, F.Tafuri, J.M.Macaulay, A.Bourdillon, S.Hou and J.M.Phillips, Proc. Third Int. Workshop on Tunneling Phenomena in High and Low Tc Superconductivity, October 1992, Capri, eds. A.di Chiaro and M.Russo, World Scientific 1993, pp.197-209
  44. Magnet Design Optimization for Grumman MAGLEV Concept, S.Kalsi, R.Herberman, C.Falkowski, M.Hennessy and A.J.Bourdillon, Proc. MAGLEV 93 Conf.,  Argonne Nat. Lab., May 19-21 (1993), Paper No. PS2-7
  45. Characterization of Diamond Films Grown by Chemical Vapor Deposition Using a Solid Carbon Source, F.Y.Chen, A.J.Bourdillon, N.X.Tan, D.G.Jeng, R.F.Salat and G.J.Fricano, Proc. 4th Annual Diamond Technology Workshop, Madison (1993)
  46. Continuous Diamond Films Grown by Chemical Vapor Deposition Using Graphite as the Carbon Source, D.G.Jeng, L.Seibles, J.W.Mitchell, F.Y.Chen, A.J.Bourdillon, R.F.Salat, and G.J.Fricano, Proc. 4th Annual Diamond Technology Workshop, Madison (1993)
  47. Laser Ablation in Processing of Advanced Materials and their Characterization, G.Raman and A.J.Bourdillon, Proceedings, Undergraduate Student Research Projects, NUS (1995)
  48. X-ray Lithography in Singapore?, A.J.Bourdillon, Proceedings of Workshop on Applications of Synchrotron Radiation, Bangkok Jan 4-6, (1996), ed. V.Sa-yakanit and W.Sritrakool, invited paper p.201
  49. Applications of Synchrotron Radiation, A.J.Bourdillon, Invited paper for Helios Workshop, CSIRO Melbourne, Oct 31-Nov 1 (1996)
  50. X-ray Lithography for Singapore?, A.J.Bourdillon ed. Report and Panel discussion from X-ray lithography seminar on 22 Sept 1995, Physics Update, 4 (1997) 58-63, Singapore
  51. Comparison of Sensitivities in Various Designs of High Temperature SQUID Gradiometer, J.R.Kong, A.J.Bourdillon and N.Zou, R&D, MINDEF-NUS Joint Seminar, Singapore Jan 31 1997, p. 93
  52. Engineering of Surfaces in Ceramic Pin Grid Array Packages to Inhibit Epoxy Bleeding, N.X.Tan, K.H.H.Lim, B.Chin and A.J.Bourdillon, HP Singapore Technical Forum '97, in print, 1997
  53. Transmission Electron Microscopy of Defects in NMOS and PMOS Structures, A.J.Bourdillon, Y.G.Koh, S.L.Chiang, C.W.Lim, J.R.Kong and G.B.Cao, SPIE Proc. ISMA '97, Microelectronics and Assembly, Eds. S.F.Yoon, R.Yu and C.A.Mack, vol. 3183, 236-242, 1997
  54. Plans for Materials Science at NUS, A.J.Bourdillon, NSTB Research Institutes and Centres Technology Partnership Symposium for the Electronics Industry, Singapore, June 1997, Eds A.Grant et al.
  55. Surface Treatment and Analysis of Advanced Plastic Packaging Substrates, N.X.Tan, E.Flores, K.Gopal, A.J.Bourdillon and A.Huan, 4th National Symposium on Progress in Materials Research, Singapore, March 1998
  56. Elimination of 'bottom pinching' effect in environmentally stable chemically amplified resist, S.P.Soo, M.H.Fan and A.J.Bourdillon, Proc Microlithography '98, SPIE vol 3332, Santa Clara, Feb. 1998
  57. The SSLS and XRL plans in Singapore, B.G.Tan and A.J.Bourdillon, XRL Business Summit, Vermont, September 28, 1998
  58. Plans for XRL and MEMS on the Singapore Synchrotron Light Source, A.J.Bourdillon and Bernard T.G.Tan, Invited paper at XEL '98, Yokohama November 9-10, 1998
  59. Plans and Progress on the Singapore Synchrotron Light Source (SSLS), A.J.Bourdillon and Bernard T.G.Tan, SRRC 4th Annual User's Meeting, Hsinchu, November 19-21, 1998
  60. A Novel Fiducial Grid for X-ray Masks, S.Chandra, J.R.Kong, C.P.Soo and A.J.Bourdillon, Microlithography 1999, Santa Clara, February 1999
  61. A Breakthrough in X-ray Lithography, A.J.Bourdillon and Y.Vladimirsky, Solid State Technology, February 2000 pp. 18-23
  62. Demagnification-by-bias in Proximity X-ray Lithography, J.R.Kong, Q.Leonard, Y.Vladimirsky and A.J.Bourdillon, Proc SPIE Conf Microlithography, 27Feb-3 Mar 2000
  63. Low k-factor Imaging and Resolution Enhacement in X-ray Lithography, Y.Vladimirsky, J.R.Kong, Q.Leonard and A.J.Bourdillon, 3 Beams Conference, Palm Springs CA 30May-2June 2000
  64. Lithography to 22 nm using Near Field X-rays, A.J.Bourdillon, G.P.Willliams, Y.Vladimirsky and C.Boothroyd, Proc SPIE Emerging Lithographic Technologies VII, vol. 5037 pt II pp 622-633, Santa Clara, Feb. 23-27, 2003
  65. Near field X-ray lithography to 15 nm, A.J.Bourdillon, C.B.Boothroyd, G.P.Williams and Y.Vladimirsky, Microlithography 2004, SPIE vol.5374 pp546-557
  66. 22 nm lithography using near field X-rays., A.J.Bourdillon, G.P.Williams, Y.Vladimirsky and C.B.Boothroyd, Microlilthography 2003, SPIE vol5037, pp. 662-633
  67. Refractive impulse normalization of FDTD wavelets in polarized response from submicron digital elements, A.J.Bourdillon, laboratory report (2012)

 

vi) Patent Disclosures

  1. Ultra High Resolution Lithographic Imaging and Printing by Exposure Near the Critical Condition, A.J.Bourdillon and Yuli Vladimirsky, US patent 6383697 (2002)
  2. Mask shaping in ultra high resolution lithography using temporal and spatial coherence, A.J.Bourdillon, U.S. patent 6953643 (2005)

 

vii) Book Reviews

  1. Scanning Tunneling Microscopy  ed. J.A.Stroscio and W.J.Kaiser, Materials Technology, 9 134 (1994)

 

viii)  Others

a)  National Engineering Initiative

  1. System Concept Definition of a Superconducting MAGLEV Electromagnetic System, M.Proise, L.Deutsch, R.Herberman, P.Shaw, S.Kalsi, R.Gran, B.M.Bohlke, J.A.Murillo, K.M.Falkowski, S.B.Kuznetsov, B.Morton, J.F.Luedeke, C.Brody and A.J.Bourdillon, Final report, volumes I,II and III, prepared under the National MAGLEV Initiative for the U.S.Army Corps of Engineers in response to contract No. DTFR53-92-C-000 04, (1992)

b)  Government Submissions

  1. Submission by the University of New South Wales to The Sub-Committee on Superconductivity, (Australian) House of Representatives Standing Committee on Industry, Science and Technology, A.J.Bourdillon, D.J.H.Corderoy, S.X.Dou, C.C.Sorrell, G.J.Russell and K.N.R.Taylor, (1988)

c)  Edited articles

  1. X-ray Lithography for Singapore? -Report and panel discussion, A.J.Bourdillon, ed., Physics Update, 4,58-63, (1997)

d)  Career Guidance

  1. Careers in Physics, A.J.Bourdillon, Brochure for the National University of Singapore Department of Physics (1994), Materials Science in the Spotlight, A.J.Bourdillon, Brochure for the National University of Singapore Department of Materials Science (1996)

 

 

 

Text Box: Logarithmically periodic solids – a bibliography Metric, Myth and Quasicrystals, 2012, UHRL, ISBN 978-0-9789-8393-2 Logarithmically Periodic Solids, Nova Science, 2011, ISBN 978-1-61122-977-6 Quasicrystals’ 2D tiles in 3D superclusters, UHRL, 2010, ISBN: 978-0-9789839-2-5 Quasicrystals – and Quasi Drivers, UHRL, 2009, ISBN 978-0-9789-8391-8 Logarithmically periodic solids – properties, evidence and uncertainties, in Quasicrystals, in Types, Systems, and Techniques, Ed. B.E. Puckerman, Nova Science, 2010, ISBN 978-1-61761-123-0 (include corrections) A.J.Bourdillon, Nearly free-electron energy-bands in a logarithmically periodic solid, Solid State Comm. 149 1221-5 (2009). A.J.Bourdillon, Indexed scattering powers in a logarithmically periodic solid, International Journal of Condensed Matter, Advanced Materials, and Superconductivity Research (2010) A.J.Bourdillon, Fine Line Structure in Convergent Beam Electron Diffraction in Icosahedral Al6Mn, Phil. Mag. Lett. 55 2l-26 (1987) http://www.quasicrystalmetric.us The metric for the quasi-Bragg law measured for the first time (http://www.quasicrystal.us The Quasi-Bragg law and metric - from geometric scatterers in three dimensional space. – condensed version submitted to Acta Cryst. and debated) http://www.quasicrystaltiling.us. Icosahedral Stereographs with 3 dimensional indexation for Dark Field TEM of Quasicrystals http://www.UHRL.net, Quasicrystallography ?! On Youtube: http://www.youtube.com/watch?v=xD30KF93qio : Quasicrystals at the American Physical Society March Meeting http://www.youtube.com/watch?v=0LDS0sQQvpk : The Quasi Bragg law and metric in quasicrystals http://www.youtube.com/watch?v=A6vpsWv9nsQ : Quasicrystals, logarithmically periodic “What to say of a High School that, every morning, eats breakfast in six dimensions?”

 

 

The book:

 

Lithography to 15 nm with dense features by

 

Near Field X-ray Lithography

 

 

  The Critical Gap is equal to the square of the size of the clear mask feature divided by three times the wavelength

 

 

UHRL, P.O.Box 700001, San Jose, CA 95170.

 nfxrl@xraylithography.us   $25 +p&p

 

 

There is a new way of doing proximity X-ray lithography that extends its limits.  The underlying physics are explained in the book.  It accounts for changes to image fidelity in copying from masks.  It shows there are true minima that belie previous engineering choices.  Simulations, while necessary for developing techniques, are obfuscating without that backbone of physical insight.  It is not hard to grasp.  This book is for those with an interest in cutting-edge semiconductor fabrication or for those interested in the broader range of Micro-ElectroMechanical Systems.  The major part of research in X-ray lithography is now performed with deep X-ray where penetration is greater than in conventional proximity.  This book is also for practitioners needing to understand current developments arising from traditional 1x proximity X-ray.

 

It may not be likely that X-ray will return immediately to its earlier status as leading Next Generation Lithography.  No competitor is more likely.  What the future holds as optical lithography becomes increasingly expensive and yield sensitive is hard to guess.  Predictably, optical will get more difficult before there is systematic change.

 

Recent development of X-ray has therefore fallen behind its natural enhancement.  Many advantages accrue from using short wavelength radiation to perform lithography for the microfabrication of dense devices.  X-ray has the advantage that it has been mature, with known and conventional costs - it remains available, not only for MEMS, but for any manufacturer with a niche product.